MT47H128M4CB-37V:A
Micron Technology
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR2 DRAM, 128MX4, 0.5ns, CMOS, PBGA60
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B60
- Memory Width4
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR2 DRAM
- Refresh Cycles8192
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Memory Organization128MX4
- Number of Terminals60
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)0.5
- Number of Words Code128M
- Memory Density (bits)536870912
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Nom (V)1.9
- Number of Words (words)134217728
- Sequential Burst Length4,8
- Standby Current-Max (A)0.006
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA60,9X11,32
- Clock Frequency-Max (MHz)267
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