MT47H128M4CB-25IT:D
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR2 DRAM, 128MX4, 0.4ns, CMOS, PBGA60
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B60
- Memory Width4
- Organization128MX4
- Package CodeFBGA
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeDDR2 DRAM
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max0.4 ns
- Number of Words134217728 words
- Terminal FinishMATTE TIN
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Supply Current-Max300 mA
- Number of Terminals60
- Standby Current-Max0.007 Amp
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA60,9X11,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)400 MHz
- Moisture Sensitivity Level1
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MT47H128M4CB-25IT:D