MT46V256M4TG-5B
Micron Technology
- Lifecycle statusDiscontinued
- DescriptionDDR1 DRAM, 256MX4, 0.7ns, CMOS, PDSO66
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G66
- Memory Width4
- Organization256MX4
- Package CodeTSSOP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density1073741824 bit
- Memory IC TypeDDR1 DRAM
- Refresh Cycles8192
- Terminal Pitch0.635 mm
- Access Time-Max0.7 ns
- Number of Words268435456 words
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max530 mA
- Number of Terminals66
- Standby Current-Max0.013 Amp
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4,8
- Interleaved Burst Length2,4,8
- Package Equivalence CodeTSSOP66,.46
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)2.6 V
- Clock Frequency-Max (fCLK)200 MHz
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MT46V256M4TG-5B