MT46V128M4BN-75ELAT:F
Micron Technology
- Lifecycle statusDiscontinued
- DescriptionDDR1 DRAM, 128MX4, 0.75ns, CMOS, PBGA60
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10
- Access ModeFOUR BANK PAGE BURST
- Length (mm)12.5
- JESD-30 CodeR-PBGA-B60
- Memory Width4
- Package CodeTBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization128MX4
- Number of Functions1
- Number of Terminals60
- Terminal Pitch (mm)1
- Access Time-Max (ns)0.75
- Number of Words Code128M
- Memory Density (bits)536870912
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)134217728
- Sequential Burst Length2,4,8
- Standby Current-Max (A)0.005
- Supply Current-Max (mA)160
- Interleaved Burst Length2,4,8
- Package Equivalence CodeBGA60,9X12,40/32
- Clock Frequency-Max (MHz)133
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
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