MT44K64M18RCT-125E:A
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR DRAM, 64MX18, 0.1ns, CMOS, PBGA168
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)13.5
- Access ModeDUAL BANK PAGE BURST
- Length (mm)13.5
- JESD-30 CodeS-PBGA-B168
- Memory Width18
- Package CodeLBGA
- Package ShapeSQUARE
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO REFRESH
- Memory Organization64MX18
- Number of Functions1
- Number of Terminals168
- Terminal Pitch (mm)1
- Access Time-Max (ns)0.1
- Number of Words Code64M
- Memory Density (bits)1207959552
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.45
- Supply Voltage-Nom (V)1.35
- Number of Words (words)67108864
- Sequential Burst Length2,4,8
- Standby Current-Max (A)0.25
- Supply Current-Max (mA)2610
- Interleaved Burst Length2,4,8
- Package Equivalence CodeBGA168,13X13,40
- Clock Frequency-Max (MHz)800
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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