MT40A512M16LY-062EAIT:E
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR4 DRAM, 512MX16, CMOS, PBGA96
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)7.5
- Access ModeMULTI BANK PAGE BURST
- Length (mm)13.5
- JESD-30 CodeR-PBGA-B96
- Memory Width16
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal PositionBOTTOM
- Memory Organization512MX16
- Number of Functions1
- Number of Terminals96
- Terminal Pitch (mm)0.8
- Number of Words Code512M
- Memory Density (bits)8589934592
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)1.26
- Supply Voltage-Min (V)1.14
- Supply Voltage-Nom (V)1.2
- Number of Words (words)536870912
- Sequential Burst Length8
- Standby Current-Max (A)0.046
- Supply Current-Max (mA)270
- Interleaved Burst Length8
- Package Equivalence CodeBGA96,9X16,32
- Clock Frequency-Max (MHz)1600
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)-40
- Screening Level / Reference StandardAEC-Q100
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MT40A512M16LY-062EAIT:E