MT2LSYT3264T4G-8
Micron Technology
- Lifecycle statusDiscontinued
- DescriptionCache SRAM Module, 32KX64, 8ns, CMOS
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-XDMA-N160
- Memory Width64
- Package CodeDIMM
- Output EnableYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeCACHE SRAM MODULE
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Memory Organization32KX64
- Number of Functions1
- Number of Terminals160
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)8
- Number of Words Code32K
- Memory Density (bits)2097152
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Supply Voltage-Max (V)3.465
- Supply Voltage-Min (V)3.135
- Supply Voltage-Nom (V)3.3
- Number of Words (words)32768
- Standby Current-Max (A)0.01
- Standby Voltage-Min (V)3.14
- Supply Current-Max (mA)450
- Package Equivalence CodeDIMM160
- Operating Temperature-Max (Cel)70
- Operating Temperature-Min (Cel)0
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MT2LSYT3264T4G-8