MT16JSF25664HIY-1G0D1
Micron Technology
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR DRAM Module, 256MX64, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-XZMA-N204
- Memory Width64
- Organization256MX64
- Package CodeDIMM
- Self RefreshYES
- JESD-609 Codee4
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density17179869184 bit
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.6 mm
- Number of Ports1
- Number of Words268435456 words
- Terminal FinishGOLD
- Temperature GradeINDUSTRIAL
- Terminal PositionZIG-ZAG
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max3200 mA
- Number of Functions1
- Number of Terminals204
- Standby Current-Max0.16 Amp
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM204,24
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)1.575 V
- Supply Voltage-Min (Vsup)1.425 V
- Supply Voltage-Nom (Vsup)1.5 V
- Clock Frequency-Max (fCLK)533 MHz
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MT16JSF25664HIY-1G0D1