MSU2N60D-85-TU
TAITRON COMPONENTS INC
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)44
- Drain Current-Max (ID) (A)2
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)90
- DS Breakdown Voltage-Min (V)600
- Feedback Cap-Max (Crss) (pF)7
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)110
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)140
- Pulsed Drain Current-Max (IDM) (A)8
- Drain-source On Resistance-Max (ohm)5
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for MSU2N60D-85-TU
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MSU2N60D-85-TU