MSJL11N65-TP-HF
Micro Commercial Components Corp.
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-PDSO-N5
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals5
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)98
- Drain Current-Max (ID) (A)11
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)650
- Feedback Cap-Max (Crss) (pF)5.5
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)211
- Pulsed Drain Current-Max (IDM) (A)33
- Drain-source On Resistance-Max (ohm)0.38
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MSJL11N65-TP-HF