MSAHR36F120A
Microsemi Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-CBCC-N3
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- Terminal PositionBOTTOM
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Turn-on Time-Nom (ton)60 ns
- Turn-off Time-Nom (toff)390 ns
- Collector Current-Max (IC)36 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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MSAHR36F120A