MS2285
Microsemi Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-XDFM-F2
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionBASE
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeNPN
- Highest Frequency BandL BAND
- DC Current Gain-Min (hFE)20
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)12.5 A
- Power Dissipation-Max (Abs)500 W
- Transistor Element MaterialSILICON
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MS2285
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MS2285