MS18R1628AH0-CM9
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionRambus DRAM Module, 128MX18, 35ns, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-XDMA-N160
- Memory Width18
- Organization128MX18
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density2415919104 bit
- Memory IC TypeRAMBUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.635 mm
- Access Time-Max35 ns
- Number of Ports1
- Number of Words134217728 words
- Terminal PositionDUAL
- Additional FeatureSELF CONTAINED REFRESH
- Supply Current-Max2389 mA
- Number of Functions1
- Number of Terminals160
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM160,25
- Supply Voltage-Max (Vsup)2.63 V
- Supply Voltage-Min (Vsup)2.37 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)1066 MHz
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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MS18R1628AH0-CM9