MS1327
Microsemi Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-PRPM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- Terminal PositionRADIAL
- Additional FeatureBUILT IN EMITTER BALLAST RESISTOR
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)10
- DC Current Gain-Min (hFE)15
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)6.5
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)35
- Collector-base Capacitance-Max (pF)80
0 suppliers available to buy or to bid for MS1327
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MS1327
Send an RFQ
MS1327