MS1280
Microsemi Corporation
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MRPM-F4
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- Terminal FinishTIN LEAD
- Terminal PositionRADIAL
- Additional FeatureWITH EMITTER BALLASTING RESISTORS
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)10
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)16 A
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max30 V
- Collector-base Capacitance-Max150 pF
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MS1280
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MS1280