MRW52102
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-CRDB-F2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionEMITTER
- Terminal PositionRADIAL
- Additional FeatureDIFFUSED BALLAST RESISTORS
- Number of Elements1
- Number of Terminals2
- Power Gain-Min (Gp)6 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandL BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)20
- Operating Temperature-Max200 Cel
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max24 V
- Transition Frequency-Nom (fT)2700 MHz
- Collector-base Capacitance-Max7 pF
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MRW52102
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MRW52102