MRW2003F
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-CRDB-F2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionBASE
- Terminal PositionRADIAL
- Additional FeatureDIFFUSED BALLAST RESISTORS
- Number of Elements1
- Number of Terminals2
- Power Gain-Min (Gp)8 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandS BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)10
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)0.5 A
- Transistor Element MaterialSILICON
- Collector-base Capacitance-Max5 pF
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MRW2003F
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MRW2003F