MRFG35003N6AT1
Freescale Semiconductor, Inc.
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeR-PQSO-N4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- J-STD-609 Codee3
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal FinishMatte Tin (Sn)
- DLA QualificationNot Qualified
- Terminal PositionQUAD
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandC BAND
- Moisture Sensitivity Level3
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)8
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)85
- Time@Peak Reflow Temperature-Max (s)40
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MRFG35003N6AT1
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MRFG35003N6AT1