MRF966
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-PRDB-F4
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL SEMICONDUCTOR
- Operating ModeDUAL GATE, DEPLETION MODE
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.08 A
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min10 V
- Operating Temperature-Max125 Cel
- Power Dissipation-Max (Abs)0.35 W
- Transistor Element MaterialGALLIUM ARSENIDE
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MRF966
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MRF966