MRF9180R6
Motorola,Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-CDFM-F4
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min65 V
- Operating Temperature-Max200 Cel
- Power Dissipation-Max (Abs)388 W
- Transistor Element MaterialSILICON
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MRF9180R6
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MRF9180R6