MRF9045MBR1
Motorola,Inc.
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDFM-F2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-272
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Dissipation-Max (W)177
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Operating Temperature-Max (Cel)175
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MRF9045MBR1
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MRF9045MBR1