MRF9002R2
Freescale Semiconductor, Inc.
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 3-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeS-PDSO-G16
- ConfigurationCOMMON SOURCE, 3 ELEMENTS
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements3
- Number of Terminals16
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Dissipation-Max (W)12
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Peak Reflow Temperature (Cel)240
- Operating Temperature-Max (Cel)150
- Time@Peak Reflow Temperature-Max (s)30
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MRF9002R2