MRF860
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-CDFM-F4
- ConfigurationCOMMON EMITTER, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionEMITTER
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals4
- Power Gain-Min (Gp)11 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)30
- Operating Temperature-Max200 Cel
- Power Dissipation-Max (Abs)71 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max30 V
- Power Dissipation Ambient-Max71 W
- Collector-base Capacitance-Max28 pF
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MRF860
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MRF860