- Lifecycle statusActive
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Number of Elements1
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)30
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max (V)30
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MRF857S
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MRF857S