MRF8372R1
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 0.2A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-PDSO-G8
- ConfigurationSEPARATE, 2 ELEMENTS
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Power Gain-Min (Gp)8 dB
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationSWITCHING
- DC Current Gain-Min (hFE)30
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.2 A
- Power Dissipation-Max (Abs)1.7 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max16 V
- Power Dissipation Ambient-Max1.67 W
- Collector-base Capacitance-Max2.5 pF
0 suppliers available to buy or to bid for MRF8372R1
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MRF8372R1
Send an RFQ
MRF8372R1