MRF6V2300NB
Freescale Semiconductor, Inc.
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDFM-F4
- ConfigurationSINGLE
- JEDEC-95 CodeTO-270AA
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)110
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)225
- Time@Peak Reflow Temperature-Max (s)40
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MRF6V2300NB