MRF6S19140HSR3 by Freescale Semiconductor, Inc. | Sourcengine

Freescale Semiconductor, Inc. MRF6S19140HSR3

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.31.00.01
SB Code
8542.31.00.00

Application
AMPLIFIER
JESD-30 Code
R-CDFP-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Dissipation-Max (W)
530
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
68
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
225
Time@Peak Reflow Temperature-Max (s)
40