MRF5S9100NBR1
Motorola,Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDFM-F4
- ConfigurationSINGLE
- JEDEC-95 CodeTO-272
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min68 V
- Operating Temperature-Max200 Cel
- Power Dissipation-Max (Abs)336 W
- Transistor Element MaterialSILICON
0 suppliers available to buy or to bid for MRF5S9100NBR1
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MRF5S9100NBR1
Send an RFQ
MRF5S9100NBR1