MRF581A
Microsemi Corporation
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionRF Bipolar Transistors Comm/Bipolar Transistor
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- J-STD-609 Codee0
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)90
- Power Dissipation-Max (W)1.25
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.2
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)15
- Collector-base Capacitance-Max (pF)3
- Transition Frequency-Nom (fT) (MHz)5000
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MRF581A