MRF547
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, PNP, TO-117
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeO-CRPM-F4
- ConfigurationSINGLE
- JEDEC-95 CodeTO-117
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypePNP
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)15
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)0.6 A
- Power Dissipation-Max (Abs)9 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max70 V
- Power Dissipation Ambient-Max9 W
- Collector-base Capacitance-Max4.5 pF
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MRF547
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MRF547