MRF545 by ADVANCED POWER TECHNOLOGY INC | Sourcengine

ADVANCED POWER TECHNOLOGY INC MRF545

Lifecycle status
Transferred
Description
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, PNP, TO-39
Category
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-39
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
PNP
Highest Frequency Band
VERY HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
15
Power Dissipation-Max (W)
3.5
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.4
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
70
Collector-base Capacitance-Max (pF)
3.2
Transition Frequency-Nom (fT) (MHz)
1400