MRF545
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, PNP, TO-39
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-39
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- Terminal FinishTIN LEAD
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypePNP
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)15
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)0.4 A
- Power Dissipation-Max (Abs)3.5 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max70 V
- Power Dissipation Ambient-Max3.5 W
- Transition Frequency-Nom (fT)1250 MHz
- Collector-base Capacitance-Max2.5 pF
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MRF545
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MRF545