MRF5015
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-CDFM-F6
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Power Gain-Min (Gp)10 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)6 A
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)10.8 pF
- DS Breakdown Voltage-Min36 V
- Operating Temperature-Max200 Cel
- Power Dissipation-Max (Abs)50 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max50 W
- Drain-source On Resistance-Max0.375 ohm
0 suppliers available to buy or to bid for MRF5015
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MRF5015
Send an RFQ
MRF5015