MRF5007R1
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-CBCC-N3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Power Gain-Min (Gp)10 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)4.5 A
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- Feedback Cap-Max (Crss)16 pF
- DS Breakdown Voltage-Min25 V
- Operating Temperature-Max200 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max25 W
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MRF5007R1