MRF392
Motorola,Inc.
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFM-F8
- ConfigurationCOMMON EMITTER, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)8
- DC Current Gain-Min (hFE)20
- Power Dissipation-Max (W)270
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)16
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)30
- Power Dissipation Ambient-Max (W)270
- Collector-base Capacitance-Max (pF)95
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MRF392