MRF316
Motorola,Inc.
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeO-CXFM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionUNSPECIFIED
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)10
- DC Current Gain-Min (hFE)10
- Power Dissipation-Max (W)220
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)9
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)35
- Power Dissipation Ambient-Max (W)220
- Collector-base Capacitance-Max (pF)200
- Transition Frequency-Nom (fT) (MHz)150
0 suppliers available to buy or to bid for MRF316
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MRF316