MRF226
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRPM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)9
- DC Current Gain-Min (hFE)5
- Power Dissipation-Max (W)45
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)2.5
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)18
- Transition Frequency-Nom (fT) (MHz)225
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MRF226
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MRF226