MRF175GV
Motorola,Inc.
- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFM-F4
- ConfigurationCOMMON SOURCE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)12
- Power Dissipation-Max (W)200
- Drain Current-Max (ID) (A)26
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Operating Temperature-Max (Cel)200
- Power Dissipation Ambient-Max (W)400
- Drain-source On Resistance-Max (ohm)0.3
0 suppliers available to buy or to bid for MRF175GV
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MRF175GV
Send an RFQ
MRF175GV