MRF1004MB
Motorola,Inc.
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- Case ConnectionBASE
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandL BAND
- Power Gain-Min (Gp) (dB)10
- DC Current Gain-Min (hFE)10
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.25
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)20
- Collector-base Capacitance-Max (pF)5
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MRF1004MB
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MRF1004MB