MR16R162GDF0-CT9
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionRambus DRAM Module, 256MX16, 32ns, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-XDMA-N184
- Memory Width16
- Organization256MX16
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density4294967296 bit
- Memory IC TypeRAMBUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Access Time-Max32 ns
- Number of Ports1
- Number of Words268435456 words
- Terminal PositionDUAL
- Additional FeatureSELF CONTAINED REFRESH
- Number of Functions1
- Number of Terminals184
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM184,40
- Supply Voltage-Max (Vsup)2.63 V
- Supply Voltage-Min (Vsup)2.37 V
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)1066 MHz
- Moisture Sensitivity Level1
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MR16R162GDF0-CT9