MPM3002
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 12A I(D), 100V, 0.15ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T12
- ConfigurationCOMPLEX
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureCURRENT SENSING
- Number of Elements4
- Number of Terminals12
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Drain Current-Max (ID)12 A
- Transistor ApplicationSWITCHING
- Turn-on Time-Max (ton)160 ns
- Feedback Cap-Max (Crss)200 pF
- DS Breakdown Voltage-Min100 V
- Turn-off Time-Max (toff)245 ns
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)62.5 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max62.5 W
- Drain-source On Resistance-Max0.15 ohm
- Pulsed Drain Current-Max (IDM)30 A
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MPM3002