MOD100A
VISHAY SILICONIX
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 21A I(D), 100V, 0.08ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeS-MDFM-P12
- ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionDUAL
- Number of Elements4
- Number of Terminals12
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)21 A
- Turn-on Time-Max (ton)135 ns
- Feedback Cap-Max (Crss)500 pF
- DS Breakdown Voltage-Min100 V
- Turn-off Time-Max (toff)225 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max400 W
- Drain-source On Resistance-Max0.08 ohm
- Pulsed Drain Current-Max (IDM)125 A
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MOD100A
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MOD100A