MN18R1624DF0-CT9
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionRambus DRAM Module, 64MX18, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- TechnologyCMOS
- Access ModeBLOCK ORIENTED PROTOCOL
- JESD-30 CodeR-XXMA-X200
- Memory Width18
- Organization64MX18
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Memory Density1207959552 bit
- Memory IC TypeRAMBUS DRAM MODULE
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Number of Words67108864 words
- Terminal PositionUNSPECIFIED
- Additional FeatureSELF CONTAINED REFRESH
- Number of Functions1
- Number of Terminals200
- Number of Words Code64M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Supply Voltage-Max (Vsup)2.63 V
- Supply Voltage-Min (Vsup)2.37 V
- Supply Voltage-Nom (Vsup)2.5 V
0 suppliers available to buy or to bid for MN18R1624DF0-CT9
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MN18R1624DF0-CT9
Send an RFQ
MN18R1624DF0-CT9