MMT3823
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-CRDB-F3
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Terminal FinishTIN LEAD
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min30 V
- Operating Temperature-Max135 Cel
- Power Dissipation-Max (Abs)0.225 W
- Transistor Element MaterialSILICON
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MMT3823
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MMT3823