MMD60R580RZRH
MAGNACHIP SEMICONDUCTOR LTD
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 8A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologySUPERJUNCTION MOSFET
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)66.5
- Drain Current-Max (ID) (A)8
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Feedback Cap-Max (Crss) (pF)3.7
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)170
- Pulsed Drain Current-Max (IDM) (A)24
- Drain-source On Resistance-Max (ohm)0.58
0 suppliers available to buy or to bid for MMD60R580RZRH
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MMD60R580RZRH
Send an RFQ
MMD60R580RZRH