MMBTH81S62Z
NATIONAL SEMICONDUCTOR CORP
- Lifecycle statusTransferred
- DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-236AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.05
- Collector-emitter Voltage-Max (V)20
- Collector-base Capacitance-Max (pF)0.85
- Transition Frequency-Nom (fT) (MHz)600
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