MMBTH81L
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-236AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-236AB
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)60
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)0.35 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max20 V
- Transition Frequency-Nom (fT)600 MHz
- Collector-base Capacitance-Max0.85 pF
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MMBTH81L