MMBT918W_R2_10001 by PANJIT International Inc. | Sourcengine

PANJIT International Inc. MMBT918W_R2_10001

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.4
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
0.225
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.05
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
15
Collector-base Capacitance-Max (pF)
3
Transition Frequency-Nom (fT) (MHz)
600
Screening Level / Reference Standard
IEC-61249, MIL-STD-750