MMBT5551/D87Z
NATIONAL SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-236AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- VCEsat-Max (V)0.2
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)30
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.2
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)160
- Power Dissipation Ambient-Max (W)0.35
- Collector-base Capacitance-Max (pF)6
- Transition Frequency-Nom (fT) (MHz)100
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MMBT5551/D87Z