MMBFJ212
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyJUNCTION
- J-STD-609 Codee3
- Operating ModeDEPLETION MODE
- Terminal FinishMATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- Power Dissipation-Max (W)0.225
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Operating Temperature-Max (Cel)150
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MMBFJ212
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MMBFJ212